? 2013 ixys corporation, all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 150 c - 65 v v dgr t j = 25 c to 150 c, r gs = 1m - 65 v v gss continuous 15 v v gsm transient 25 v i d25 t c = 25 c - 120 a i dm t c = 25 c, pulse width limited by t jm - 360 a i a t c = 25 c - 60 a e as t c = 25 c1j p d t c = 25 c 298 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6mm (0.062 in.) from case for 10s 300 c t sold plastic body for 10s 260 c m d mounting torque (to-220 & to-247) 1.13/10 nm/lb.in. weight to-263 2.5 g to-220 3.0 g to-247 6.0 g ds100026b(01/13) symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = - 250 a - 65 v v gs(th) v ds = v gs , i d = - 250 a - 2.0 - 4.0 v i gss v gs = 15v, v ds = 0v 100 na i dss v ds = v dss , v gs = 0v - 10 a t j = 125 c - 750 a r ds(on) v gs = -10v, i d = 0.5 ? i d25 , note 1 10 m trenchp tm power mosfets p-channel enhancement mode avalanche rated ixta120p065t IXTP120P065T ixth120p065t v dss = - 65v i d25 = - 120a r ds(on) 10 m features z international standard packages z avalanche rated z extended fbsoa z fast intrinsic diode z low r ds(on) and q g advantages z easy to mount z space savings z high power density applications z high-side switching z push pull amplifiers z dc choppers z automatic test equipment z current regulators z battery charger applications g = gate d = drain s = source tab = drain to-247 (ixth) g s d d (tab) to-263 aa (ixta) g s d (tab) g d s to-220ab (ixtp) d (tab)
ixys reserves the right to change limits, test conditions, and dimensions. ixta120p065t ixth120p065t IXTP120P065T ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 note 1. pulse test, t 300 s, duty cycle, d 2%. symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = -10v, i d = 0.5 ? i d25 , note 1 45 75 s c iss 13.2 nf c oss v gs = 0v, v ds = - 25v, f = 1mhz 1345 pf c rss 505 pf t d(on) 31 ns t r 28 ns t d(off) 38 ns t f 21 ns q g(on) 185 nc q gs v gs = -10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 55 nc q gd 58 nc r thjc 0.42 c/w r thcs (to-220) 0.50 c/w (to-247) 0.21 c/w source-drain diode symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. i s v gs = 0v - 120 a i sm repetitive, pulse width limited by t jm - 480 a v sd i f = - 60a, v gs = 0v, note 1 -1.3 v t rr 53 ns q rm 77 nc i rm - 2.9 a resistive switching times v gs = -10v, v ds = - 33v, i d = - 50a r g = 1 (external) i f = - 60a, -di/dt = -100a/ s v r = - 33v, v gs = 0v to-247 outline pins: 1 - gate 2 - drain 3 - source 4 - drain to-220 outline 1 = gate 2 = drain 3 = source to-263 outline 1. gate 2. drain 3. source 4. drain dim. millimeter inches min. max. min. max. a 4.06 4.83 .160 .190 b 0.51 0.99 .020 .039 b2 1.14 1.40 .045 .055 c 0.40 0.74 .016 .029 c2 1.14 1.40 .045 .055 d 8.64 9.65 .340 .380 d1 8.00 8.89 .280 .320 e 9.65 10.41 .380 .405 e1 6.22 8.13 .270 .320 e 2.54 bsc .100 bsc l 14.61 15.88 .575 .625 l1 2.29 2.79 .090 .110 l2 1.02 1.40 .040 .055 l3 1.27 1.78 .050 .070 l4 0 0.13 0 .005
? 2013 ixys corporation, all rights reserved ixta120p065t ixth120p065t IXTP120P065T fig. 1. output characteristics @ t j = 25oc -120 -100 -80 -60 -40 -20 0 -1.4 -1.2 -1 -0.8 -0.6 -0.4 -0.2 0 v ds - volts i d - amperes v gs = -10v - 9v - 8v - 5 v - 6 v - 7 v fig. 2. extended output characteristics @ t j = 25oc -350 -300 -250 -200 -150 -100 -50 0 -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 v ds - volts i d - amperes v gs = -10v - 5 v - 6 v - 7 v - 8 v - 9 v fig. 3. output characteristics @ t j = 125oc -120 -100 -80 -60 -40 -20 0 -2 -1.8 -1.6 -1.4 -1.2 -1 -0.8 -0.6 -0.4 -0.2 0 v ds - volts i d - amperes v gs = -10v - 9v - 8v - 6v - 5v - 7v fig. 4. r ds(on) normalized to i d = - 60a value vs. junction temperature 0.6 0.8 1.0 1.2 1.4 1.6 1.8 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r ds(on) - normalized v gs = -10v i d = -120a i d = - 60a fig. 5. r ds(on) normalized to i d = - 60a value vs. drain current 0.8 1.0 1.2 1.4 1.6 1.8 -360 -300 -240 -180 -120 -60 0 i d - amperes r ds(on) - normalized v gs = -10v t j = 25oc t j = 125oc fig. 6. maximum drain current vs. case temperature -140 -120 -100 -80 -60 -40 -20 0 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes
ixys reserves the right to change limits, test conditions, and dimensions. ixta120p065t ixth120p065t IXTP120P065T fig. 7. input admittance -180 -160 -140 -120 -100 -80 -60 -40 -20 0 -6.5 -6.0 -5.5 -5.0 -4.5 -4.0 -3.5 -3.0 v gs - volts i d - amperes t j = 125oc 25oc - 40oc fig. 8. transconductance 0 20 40 60 80 100 -180 -160 -140 -120 -100 -80 -60 -40 -20 0 i d - amperes g f s - siemens t j = - 40oc 25oc 125oc fig. 9. forward voltage drop of intrinsic diode -300 -250 -200 -150 -100 -50 0 -1.5 -1.4 -1.3 -1.2 -1.1 -1.0 -0.9 -0.8 -0.7 -0.6 -0.5 -0.4 v sd - volts i s - amperes t j = 125oc t j = 25oc fig. 10. gate charge -10 -9 -8 -7 -6 -5 -4 -3 -2 -1 0 0 20 40 60 80 100 120 140 160 180 200 q g - nanocoulombs v gs - volts v ds = - 33v i d = - 60a i g = -1ma fig. 11. capacitance 100 1,000 10,000 100,000 -40 -35 -30 -25 -20 -15 -10 -5 0 v ds - volts capacitance - picofarads f = 1 mh z c iss c rss c oss fig. 12. forward-bias safe operating area 1 10 100 1,000 110100 v ds - volts i d - amperes t j = 150oc t c = 25oc single pulse 25s 1ms 100s r ds(on) limit 10ms - - - --- dc, 100ms - external lead current limit
? 2013 ixys corporation, all rights reserved ixta120p065t ixth120p065t IXTP120P065T fig. 14. resistive turn-on rise time vs. drain current 16 18 20 22 24 26 28 30 32 -50 -46 -42 -38 -34 -30 -26 i d - amperes t r - nanoseconds r g = 1 ? , v gs = -10v v ds = - 33v t j = 25oc t j = 125oc fig. 15. resistive turn-on switching times vs. gate resistance 0 20 40 60 80 100 120 140 160 180 0 2 4 6 8 10 12 14 16 18 r g - ohms t r - nanoseconds 0 10 20 30 40 50 60 70 80 90 t d(on) - nanoseconds t r t d(on) - - - - t j = 125oc, v gs = -10v v ds = - 33v i d = - 50a, - 25a fig. 16. resistive turn-off switching times vs. junction temperature 18 19 20 21 22 23 24 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t f - nanoseconds 35 40 45 50 55 60 65 t d(off) - nanoseconds t f t d(off) - - - - r g = 1 ? , v gs = -10v v ds = - 33v i d = - 25a i d = - 50a fig. 17. resistive turn-off switching times vs. drain current 34 38 42 46 50 54 58 62 -50 -46 -42 -38 -34 -30 -26 i d - amperes t f - nanoseconds 18 19 20 21 22 23 24 25 t d(off) - nanoseconds t f t d(off) - - - - r g = 1 ? , v gs = - 10v v ds = - 33v t j = 25oc t j = 25oc t j = 125oc t j = 125oc fig. 13. resistive turn-on rise time vs. junction temperature 12 16 20 24 28 32 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t r - nanoseconds r g = 1 ? , v gs = -10v v ds = - 33v i d = - 50a i d = - 25a fig. 18. resistive turn-off switching times vs. gate resistance 0 20 40 60 80 100 120 140 160 180 200 0 2 4 6 8 10 12 14 16 18 r g - ohms t f - nanoseconds 0 30 60 90 120 150 180 210 240 270 300 t d(off) - nanoseconds t f t d(off) - - - - t j = 125oc, v gs = -10v v ds = - 33v i d = - 50a i d = - 25a
ixys reserves the right to change limits, test conditions, and dimensions. ixta120p065t ixth120p065t IXTP120P065T ixys ref: t_120p065t(a6)11-08-10-a fig. 19. maximum transient thermal impedance 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w
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